RESUMO
The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.
RESUMO
Multilayered samples consisting of Al, Co and Ni nanolayers were produced by MBE and characterized nondestructively by means of SRXRF, mu-XRF, WDXRF, RBS, XRR, and destructively with SIMS. The main aims were to identify the elements, to determine their purity and their sequence, and also to examine the roughness, density, homogeneity and thickness of each layer. Most of these important properties could be determined by XRF methods, e.g., on commercial devices. For the thickness, it was found that all of the results obtained via XRR, RBS, SIMS and various XRF methods (SRXRF, mu-XRF, WDXRF) agreed with each other within the limits of uncertainty, and a constant deviation from the presets used in the MBE production method was observed. Some serious preliminary discrepancies in the results from the XRF methods were examined, but all deviations could be explained by introducing various corrections into the evaluation methods and/or redetermining some fundamental parameters.
